采用 Ｆ Ｔ Ｉ Ｒ、 Ｔ Ｅ Ｍ、 Ｓ Ｅ Ｍ 等技术， 对在渗硼层表面经ｒｆ Ｐ Ｃ Ｖ Ｄ 沉积的 Ｂ Ｎ 膜进行了研究试验证明， 与采用 Ｎ２ 气和 Ｈ２ 气相比， 以 Ａｒ ＋ １０ｖｏｌ％ Ｈ２ 作为载气， 所获得的膜层ｃ Ｂ Ｎ 含量最高， 膜厚最大， 可达４６μｍ ， 且膜基结合良好而以 Ｎ２ 气或 Ｈ２ 气为载气时， 前者会导致膜基结合力大大下降， 后者会引起沉积速度明显降低结果表明， 对于 Ｐ Ｃ Ｖ Ｄ 过程， 控制ｃ Ｂ Ｎ 形成的主要因素是离子轰击能量的转移， 而不是氢的选择溅射过程试验获得的膜层由ａ Ｂ Ｎ 和ｃ Ｂ Ｎ 组成， ｃ Ｂ Ｎ的尺寸为２０ ～４０ｎｍ The B N films deposited by rFcPDVD on the surface of the boronizing layer have been studied by means of F T I R, T E M, and S E M. The experiments show that compared with the N2 gas and H2 gas phase Ratio of Ar + 10vol% H2 as a carrier gas, the obtained film c B N content highest, the largest film thickness, up to 4  6μm, and the film-based combination  with N2 gas or H2 gas as a carrier gas , The former results in a significant decrease in membrane-based binding, which in turn causes a significant reduction in deposition rate. The results show that the main factor controlling the formation of cBN for the P C V D process is the transfer of ion bombardment energy instead of hydrogen The sputtering process selected  test the film from the a  B N and c  B N composition, c  B N size of 20 ~ 40nm 