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据《科技开发动态》2003年第8期报导,该单晶硅片衬底的磁控溅射铁膜合成二硫化铁的制备技术,采用位向分别为(100)及(111)的两种单晶硅片为载膜衬底,通过磁控溅射沉积25～150nm厚度的纯铁膜,再将纯铁膜和在硫化温度下能产生80KPa压力所需质量的升化硫粉封装于石英管中,抽真空后密封置于加热炉中,以3℃/min的升温速率加热至400～500℃进行热硫化反应10～20h,以2℃/min的速率降温至室温。
According to “Science and Technology Development,” 2003 No. 8 reported that the single-crystal silicon substrate magnetron sputtering iron film synthesis of iron disulfide preparation technology, using the bit to (100) and (111) of the two Monocrystalline silicon film is a carrier substrate, deposited by magnetron sputtering a pure iron film having a thickness of 25-150 nm, and then the pure iron film and the ascending sulfur powder capable of generating a required pressure of 80 KPa at the vulcanization temperature are encapsulated in quartz Tube, vacuum sealed and placed in a heating furnace, heating at a heating rate of 3 ℃ / min to 400 ~ 500 ℃ thermal curing reaction 10 ~ 20h, at a rate of 2 ℃ / min cooling to room temperature.