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采用记录在光致热敏折射率玻璃中的反射型体布拉格光栅作为反馈元件构成外腔半导体激光阵列,对其输出光谱特性进行了实验研究,分析了快轴准直透镜的位置对外腔反馈耦合效率的影响。实验结果表明,在体布拉格光栅外腔反馈作用下,半导体激光阵列输出光谱中心波长得到锁定,同时输出线宽显著变窄。重点研究了体布拉格光栅的反射率对外腔反馈半导体激光阵列输出光谱特性以及激光器效率的影响。实验结果表明,体布拉格光栅反射率的增加可提高半导体激光阵列内腔模式的抑制效果,提高输出光谱对比度,减小输出光谱线宽。使用反射率为30%的体布拉格光栅,可将半导体激光阵列的输出波长锁定在808nm附近,输出光谱线宽压缩至0.18nm。外腔半导体激光器的输出功率达24.8W,效率为82.6%。
The external cavity semiconductor laser array is fabricated by using a reflective Bragg grating with a reflection recorded in a photothermally refractive index glass. The output spectral characteristics of the laser diode array are experimentally investigated. The position of the fast axis collimating lens is feedback coupled to the external cavity The impact of efficiency. The experimental results show that the output wavelength of the semiconductor laser array is locked at the output of the Bragg grating and the output line width is narrowed significantly. The effects of the Bragg grating reflectivity on the output spectral characteristics of an external cavity feedback semiconductor laser array and the efficiency of the laser are studied. The experimental results show that the increase of the Bragg grating reflectivity can improve the suppression effect of the cavity mode of the semiconductor laser array, improve the output spectral contrast and reduce the output spectral linewidth. Using a Bragg grating with a reflectance of 30%, the output wavelength of the semiconductor laser array can be locked in the vicinity of 808 nm and the output spectral linewidth is compressed to 0.18 nm. External cavity semiconductor laser output power of 24.8W, the efficiency of 82.6%.