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本文采用质量分析的低能离子束外延法（以下简称IBE法）在Si（111）衬底上外延生长了β-FeSi2薄膜，并进行了X射线衍射测量分析；与扫描电镜配合验证了β-FeSi2外延薄膜的形成．实验结果表明：所得β-FeSi2（101）或（110）面基本平行于Si（111）面，验证了Si（111）上β-FeSi2外延薄膜的形成；并对失配度做了精确的计算；薄膜形貌呈岛屿状分布，同时分析了生长条件对薄膜形貌的影响．
In this paper, β-FeSi2 thin films were epitaxially grown on Si (111) substrates by mass spectrometry and low energy ion beam epitaxy (IBE), and X-ray diffraction measurements were performed. The results of scanning electron microscopy showed that β-FeSi2 Epitaxial thin film formation. The experimental results show that the β-FeSi2 (101) or (110) plane is almost parallel to the Si (111) plane, and the formation of β-FeSi2 epitaxial films on Si (111) The morphology of the films showed island-like distribution, and the influence of growth conditions on the morphology of the films was also analyzed.