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目前808nm高效率激光二极管产品的转换效率只有50%左右,还有很大的提升空间。通过提高欧姆接触层浓度、界面渐变和波导层掺杂等方面的外延材料结构优化,减小附加电压和电阻值,设计制作了808nm大光腔应变量子阱外延材料;并制作了200μm发光区标准单管,提取了材料内部参数,材料内损耗iα为0.67cm-1,内量子效率iη为0.88;将圆片解理成2mm腔长的巴条进行腔面镀膜,并烧结成标准单管,25℃下单管电光效率达到61.1%;将巴条烧结到微通道载体上,制作成标准微通道水冷单条阵列,水温15℃110A下输出光功率126.6W,电光转换效率62.77%。
Currently 808nm high efficiency laser diode conversion efficiency of only about 50%, there is still much room for improvement. By increasing the ohmic contact layer concentration, interface gradient and waveguide layer doping and other aspects of epitaxial material structure optimization, reducing the additional voltage and resistance, designed 808nm large cavity strain quantum well epitaxial material; and produced 200μm light emitting area standard Single tube, the internal parameters of the material were extracted, the material loss iα was 0.67cm-1, the internal quantum efficiency iη was 0.88; the disk cleaved into 2mm cavity length of the bar surface coating, and sintered into a standard single tube, 25 ℃ The single tube electro-optic efficiency reached 61.1%; the bar was sintered to the microchannel carrier, made into a standard micro-channel water-cooled single array, water temperature 15 ℃ 110A output optical power 126.6W, electro-optical conversion efficiency of 62.77%.