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本文叙述从富Te溶液往CdTe衬底上液相外延(LPE)(CdHg)Te时,作为原位洗涤熔体的Bi溶液的应用。在此场合,铋具有若干优点:ⅰ)在LPE的生长温度下(～460℃),CdTe在其中的溶解度可以获得一个合适的清除速度(～10μm/min)。ⅱ)清除洗涤熔体彻底,由此可避免对随之而来的生长溶液的沾污。ⅲ)它的蒸汽压很低。ⅳ)它的分凝系数很小,所以,由Te生长溶液吸收的任何少量的Bi都只会非常少量地进入(CdHg)Te外延层中。已用二次离子质谱分析法(SIMS)和Hall测量对衬底作过洗涤熔体处理后生长的外延层进行了评价。
This article describes the use of a Bi solution as an in-situ wash melt from a Te-rich solution to a liquid phase epitaxy (CdTe) (CdHg) Te on a CdTe substrate. In this case, bismuth has several advantages: i) CdTe has a suitable removal rate (~ 10 μm / min) at which the LPE is grown (~ 460 ° C). Ii) Cleaning The wash melt is thoroughly removed, thereby avoiding contamination of the ensuing growth solution. Iii) It has a low vapor pressure. Ⅳ) has a small segregation coefficient so that any small amount of Bi absorbed by the Te growth solution will only enter into the (CdHg) Te epitaxial layer with a very small amount. Epitaxial layers grown after the wash melt treatment of the substrate have been evaluated by SIMS and Hall measurements.