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Increases in Si content and the calculated Raman spectra acquired from the Si_xGe_(1-x) alloys reveal that the frequencies of the Ge-Si and Si-Si modes are up-shifted obviously,meanwhile that of the Ge-Ge optical mode is down-shifted,which is strongly dependent on their microstructural changes.The linear decrease and increase caused by their force constant(bond lengths and bond angles) changes,which can be used as a fingerprint to identify the average Si content.The complex microstructural changes induced by increasing Si content can be clearly displayed by Raman spectra transformation.
Increases in Si content and the calculated Raman spectra acquired from the Si_xGe_ (1-x) alloys reveal that the frequencies of the Ge-Si and Si-Si modes are up-shifted obviously, meanwhile that of the Ge-Ge optical mode is down -shifted, which is strongly dependent on their microstructural changes. The linear decrease and increase caused by their force constant (bond lengths and bond angles) changes, which can be used as a fingerprint to identify the average Si content. by increasing Si content can be clearly displayed by Raman spectra transformation.