【摘 要】
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We present a quantum study on the electrical behavior of the self-switching diode (SSD).Our simulation is based on non-equilibrium Greens function formalism alo
【机 构】
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Department of Electrical Engineering, Arak Branch, Islamic Azad University Arak, Iran“,”Department o
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We present a quantum study on the electrical behavior of the self-switching diode (SSD).Our simulation is based on non-equilibrium Greens function formalism along with an atomistic tight-binding model.Using this method,electrical characteristics of devices,such as tu-on voltage,rectification ratio,and differential resistance,are investigated.Also,the effects of geometrical variations on the electrical parameters of SSDs are simulated.The carrier distribution inside the nano-channel is successfully simulated in a two-dimensional model under zero,reverse,and forward bias conditions.The results indicate that the tu-on voltage,rectification ratio,and differential resistance can be optimized by choosing appropriate geometrical parameters.
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