Transparent conductive Al doped ZnO thin films were deposited by ultrasonic spray technique.Conditions of preparation have been optimized to get good quality.A set of aluminum(Al) doped ZnO(between 0 and 5 wt%) thin films were grown on glass substrate at 350℃.Nanocrystalline films with a hexagonal wurtzite structure show a strong(002) preferred orientation.The maximum value of grain size G = 32.05 nm is attained of Al doped ZnO film with 3 wt%.All the films have low absorbance in the visible region,thus the films are transparent in the visible region;the band gap energy increased from 3.10 to 3.26 eV when Al concentration increased from 0 to 3 wt%.The electrical conductivity of the films increased from 7.5 to 15.2(Ω·cm)~(-1).So the best results are achieved in Al doped ZnO film with 3 wt%. Transparent conductive Al doped ZnO thin films were deposited by ultrasonic spray technique. Conditions of preparation have been optimized to get good quality. A set of aluminum (Al) doped ZnO (between 0 and 5 wt%) thin films were grown on glass substrate at 350 ° C.Nanocrystalline films with a hexagonal wurtzite structure show a strong (002) preferred orientation. Maximum value of grain size G = 32.05 nm is attained of Al doped ZnO film with 3% by weight. All the films have low absorbance in the visible The band gap energy increased from 3.10 to 3.26 eV when Al concentration increased from 0 to 3 wt%. The electrical conductivity of the films increased from 7.5 to 15.2 (Ω · cm) ~ (-1) .So the best results are achieved in Al doped ZnO film with 3 wt%.