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半导体材料及其光电器件如激光器、探测器以及高速微波器件有着广阔的应用前景。半导体材料的结构和缺陷特性对器件性能起着至关重要的影响,然而对材料进行纳米尺度下的检测、表征无论是理论上还是技术和设备上都需要深入研究和发展,因此扫描近场光学显微技术在半导体材料表征领域有着无可替代的地位。扫描近场光学显微技术突破了传统光学显微技术的衍射分辨率极限的限制,具有超高空间分辨率、超高探测灵敏度等特点,并且是一种非接触性探测,具有无损伤性。简要介绍了扫描近场光学显微镜的原理及在半导体材料研究中的应用,包括量子阱结构中的位错及缺陷的表征,半导体器件的表面复合速率及扩散长度的纳米表征,以及半导体薄膜中的缺陷分布的检测。探讨了目前相关研究领域存在的主要问题,并对其发展趋势和前景进行了展望。
Semiconductor materials and optoelectronic devices such as lasers, detectors and high-speed microwave devices have broad application prospects. The structure and defect characteristics of semiconductor materials play an important role in the performance of the device. However, the nanoscale detection and characterization of materials requires theoretical study and further research and development on both technology and equipment. Therefore, scanning near-field optics Microscopy has an irreplaceable role in the field of semiconductor material characterization. Scanning near-field optical microscopy breaks through the limitations of the diffraction resolution limit of traditional optical microscopy, featuring ultra-high spatial resolution, ultra-high detection sensitivity, and is a non-contact detection with no damage. The principle of scanning near-field optical microscopy and its application in the research of semiconductor materials are briefly introduced, including the characterization of dislocations and defects in quantum well structure, the surface recombination rate of semiconductor devices and the nano-characterization of diffusion length, Defect distribution detection. The main problems existing in relevant research fields are discussed, and the development trends and prospects of the research are also prospected.