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利用ＭＯＣＶＤ技术和光电子器件工艺成功地制备了Ｐ－ｉ－ｎ结构的Ｐ－ＺｎＳｅ－（Ｚｎ０．６５Ｃｄ０．３５Ｓｅ－ＺｎＳｅＭＱＷ）－ｎ－ＺｎＳｅ自电光效应器件（ＳＥＥＤ）。在这种自由光效应器件中，在反向偏置电压下实现了由量子限制斯塔克效应（ＱｕａｎｔｕｍＣｏｎｆｉｎｅｄＳｔａｒｋＥｆｆｅｃｔ）引起的电光调制。
P-ZnSe- (Zn0.65Cd0.35Se-ZnSeMQW) -n-ZnSe self-electro-optic effect device (SEED) with P-i-n structure was successfully fabricated by MOCVD technology and optoelectronic device technology. In such a free-light-effect device, electro-optic modulation caused by the quantum confinement Stark effect is achieved at a reverse bias voltage.