设计了一款用于驱动有源功率因数校正外部功率MOSFET的驱动电路.该电路包括电平移位和图腾柱输出级两个部分.电平移位采用电流镜结构,通过控制偏置电流降低电路功耗.图腾柱输出级通过加入死区时间降低功耗,并将高压P管的栅电压箝位在6 V和11 V之间,不仅能够降低功耗,也节省了版图面积.基于0.4μm BCD工艺,采用HSPICE仿真结果表明,在VDD为14 V,开关频率为75 kHz时,整体电路的功耗约为7.34 mW,并节约了15%的版图面积. A driving circuit is designed for driving the active power factor correction external power MOSFET. The circuit consists of two parts: level shift and totem pole output stage. The level shift uses the current mirror structure to reduce the circuit work by controlling the bias current The totem-pole output stage reduces power consumption by adding dead time and clamps the gate voltage of the high-voltage P-pipe between 6 V and 11 V, not only reducing power consumption but also saving layout area.Based on 0.4 μm BCD Technology, using HSPICE simulation results show that the overall circuit consumes about 7.34 mW at a VDD of 14 V and a switching frequency of 75 kHz, saving 15% of the layout area.