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Doped with Sb and Te, Mg2Si based compounds were prepared respectively by solid state reaction at 823 K for 8 h. Effects of dopants of Sb and Te on the structure and thermoelectric properties of the compounds were investigated. By calculating the values of the electrical conductivity for Sb-doped sample, the mechanism of electric conduction at 625 K is different. The figure of merit for sample doped with 0.4 wt% Te at500K is 2.4 × 10-3W/mK2,and it reaches 3. 3 ×10-3 W/mK2 at 650K for the sample doped with 0. 5wt% Sb. The values are more than 1.4 times and 2.3 times of the pure Mg2 Si sample.
Doped with Sb and Te, Mg2Si based compounds were prepared respectively by solid state reaction at 823 K for 8 h. Effects of dopants of Sb and Te on the structure and thermoelectric properties of the compounds were investigated. By calculating the values of the electrical conductivity for Sb-doped sample, the mechanism of electric conduction at 625 K is different. The figure of merit for sample doped with 0.4 wt% Te is 500K is 2.4 × 10 -3 W / mK 2, and it reaches 3. 3 × 10 -3 W / mK2 at 650K for the sample doped with 0.5wt% Sb. The values are more than 1.4 times and 2.3 times the pure Mg2Si sample.