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研究了利用ICP(Inductively Coupled Plasma)干法刻蚀工艺制备长波碲镉汞光导器件过程中刻蚀气体压强对材料电学参数的影响。发现增大气体压强会导致材料的电学性能衰退,表现为材料的载流子浓度增加、迁移率降低以及电阻率增加。分析认为增大的压强使得材料内部产生了更多的填隙Hg离子,增强了载流子受到的电离杂质散射作用;同时材料内部也产生了更多的缺陷,极化声子散射作用也因此加强。由此解释了在流片过程中出现的某一批次碲镉汞光导器件性能的恶化是该批次器件ICP刻蚀工艺中的气压参数增加所致。
The effect of etching gas pressure on the electrical parameters of the material during the preparation of long wave HgCdTe photoconductors by ICP (Inductively Coupled Plasma) dry etching was studied. It was found that increasing gas pressure leads to the deterioration of the electrical properties of the material, which is indicated by the increase of the carrier concentration, the decrease of the mobility and the increase of the resistivity of the material. It is considered that the increased pressure causes more interstitial Hg ions to be generated in the material, which enhances the scattering of ionized impurities by the carriers. At the same time, more defects are generated in the material, and the polarization phonon scattering strengthen. It is explained that the deterioration of the performance of a certain batch of HgCdTe light guide devices during the process of slitting is caused by the increase of the atmospheric pressure parameters in the ICP etching process of the batch devices.