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建立表面注入双重降低表面电场(D-RESURF)结构击穿电压模型。D-RESURF器件在衬底纵向电场和Pb区附加电场的影响下,漂移区电荷共享效应增强,优化漂移区掺杂浓度增大,器件导通电阻降低。分析漂移区浓度和厚度对击穿电压的影响,获得改善击穿电压和导通电阻折中关系的途径。在满足最优表面电场和完全耗尽条件下,导出吻合较好的二维RESURF判据。在理论的指导下,成功研制出900 V的D-RESURF高压器件。
To establish a breakdown voltage model of the surface-injected double-drop surface electric field (D-RESURF) structure. D-RESURF device under the influence of the substrate longitudinal electric field and additional electric field Pb region, the drift region charge sharing effect increases, the optimal drift region doping concentration increases, the device on-resistance decreases. The effect of drift region concentration and thickness on the breakdown voltage is analyzed, and the way to improve the compromise between breakdown voltage and on-resistance is obtained. Under the condition of satisfying the optimal surface electric field and the exhaustive condition, the two-dimensional RESURF criterion with good agreement is deduced. Under the guidance of theory, successfully developed 900 V D-RESURF high-voltage devices.