Analysis of fabrication results for 17×17 polymer arrayed waveguide grating multiplexers with flat s

来源 :Journal of Semiconductors | 被引量 : 0次 | 上传用户:gyl720909
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Based on transmission theory, a 17×17 polymer arrayed waveguide grating(AWG) multiplexer parameter optimization is performed, and the influence of the fabrication results on the transmission characteristics are analyzed. In this paper, we mainly discuss three of the main errors in the fabrication of polymer AWG devices. One is n1, which is caused by the tuning of the core refractive index n1, the second is b, which results from the rotating-coating of the core thickness b, and the other is the non-ideal core cross-section, which is caused by steam redissolution. The effects of the above fabrication errors on the transmission characteristics of the AWG device are investigated, and compensation techniques are proposed. By comparing the theoretical simulation and experimental results, the shift in the transmission spectrum is reduced by 0.028 nm, the 3 dB bandwidth is increased by about 0.036 nm, the insertion loss is reduced by about 3 dB for the central channel and 4.5 dB for the edge channels, and the crosstalk is reduced by 1.5 dB. Based on transmission theory, a 17 × 17 polymer arrayed waveguide grating (AWG) multiplexer parameter optimization is performed, and the influence of the fabrication results on the transmission characteristics are analyzed. In this paper, we mainly discuss three of the main errors in the fabrication of polymer AWG devices. One is n1, which is caused by the tuning of the core refractive index n1, the second is b, which results from the rotating-coating of the core thickness b, and the other is the non-ideal core Cross-section, which is caused by steam redissolution. The effects of the above fabrication errors on the transmission characteristics of the AWG device are investigated, and compensation techniques are proposed. By comparing the theoretical simulation and experimental results, the shift in the transmission spectrum is reduced by 0.028 nm, the 3 dB bandwidth is increased by about 0.036 nm, the insertion loss is reduced by about 3 dB for the central channel and 4.5 dB for the edge channels, and the crosstalk is reduced by 1.5 dB.
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