论文部分内容阅读
在合成气反应过程中影响C_2-含氧化合物生成诱导期的因素看来是复杂的.本文通过反应装置的管道系统对反应产物吸附的影响和反应过程中金属铑和钒促进剂相互作用状态变化的考察及对反应结果的联系分析发现,C_2-含氧化合物的生成诱导期和它的生成业率,与它在催化剂上的饱和吸附量有关.在反应中心上生成的Cl_2-含氧化合物可能经历一个向载体表面迁移-吸附-脱附的过程.C_2含氧化合物的表观生成速率在初始阶段随反应时间的延长和发面吸附C_2-含氧化物的增多而上升;当吸附的量达饱和吸附量时,C_2-含氧化合物的表观生成速率进入稳态.这似乎是Rh/V/SiO_2催化剂主导致生成诱导期的主要原因.
The factors influencing the induction period of C 2 O-containing compounds appear to be complex in the process of syngas reaction.In this paper, the influence of the reaction system on the adsorption of reaction products and the change of the interaction between rhodium and vanadium promoter during the reaction And the correlation analysis of the reaction results showed that the formation induction period of C 2 -oxo compound and its generation rate were related to the amount of saturated adsorption on the catalyst.The Cl 2 -oxo compounds generated on the reaction center Undergoes a process of migration-adsorption-desorption to the surface of the support.The apparent rate of formation of oxygenates increases with the increase of reaction time and the increase of C 2 O-oxides on the surface during the initial stage of C 2 O 2 adsorption. At saturated adsorption, the apparent formation rate of C 2 O-containing compounds entered steady state, which seems to be the main reason that Rh / V / SiO 2 catalyst led to the induction period.