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本文用卢瑟福背散射(RBS),横断面透射电子显微镜(XTEM)及微区电子衍射技术研究了锗离子注入硅单晶中的非晶化及二次缺陷的特性。离子注入能量为400keV,剂量范围为1×100~(13)至1×10~(15)/cm~2,离子束流强度为0.046μA/cm~2,注入温度为室温。实验发现,在本工作的离子注入条件下,入射锗离子使硅单晶表面注入层开始非晶化的起始剂量大于0.6×10~(14)/cm~2。形成一个完整匀质表面非晶层所需的临界剂量为1×10~(15)/cm~2。热退火后产生的二次缺陷特性极大地受到退火前样品注入层非晶化程度的影响。
In this paper, Rutherford backscattering (RBS), cross-sectional transmission electron microscopy (XTEM) and micro-region electron diffraction were used to study the characteristics of amorphization and secondary defects in Si ion implanted Si single crystals. The ion implantation energy is 400keV, the dose range is from 1 × 100 ~ (13) to 1 × 10 ~ (15) / cm ~ 2, the ion beam intensity is 0.046μA / cm ~ 2 and the injection temperature is room temperature. It was found that the initial dose of germanium ion to start the amorphization of silicon single crystal surface was larger than 0.6 × 10 ~ (14) / cm ~ 2 under the ion implantation conditions of this work. The critical dose required to form a complete uniform surface amorphous layer is 1 × 10 ~ (15) / cm ~ 2. The secondary defect characteristics after thermal annealing are greatly affected by the degree of amorphization of the sample injection layer before annealing.