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在 1 5 K和 0～ 9GPa静压范围下测量了 Ga N0 .0 1 5As0 .985/ Ga As量子阱的光致发光谱。观察到了 Ga NAs阱和 Ga As垒的发光 ,发现 Ga NAs阱发光峰随压力的变化比 Ga As垒发光峰要小很多。当压力超过 2 .5 GPa后还观察到了与 Ga As中的 N等电子陷阱有关的一组新发光峰。用二能级模型及测得的 Ga As带边和 N等电子能级的压力行为计算了 Ga NAs发光峰随压力的变化 ,但计算结果与实验结果相差甚大 ,表明二能级模型并不完全适用。对观察到的 Ga NAs发光峰的强度和半宽随压力的变化也进行了简短讨论。
The photoluminescence spectra of Ga N0 .0 1 5As0. 985 / Ga As quantum wells were measured at 15 K and 0 ~ 9 GPa static pressure range. The luminescence of Ga NAs well and Ga As barrier was observed. It was found that the emission peak of Ga NAs trap with pressure was much smaller than the GaAs luminescence peak. A new set of luminescence peaks associated with N electron traps in GaAs was also observed at pressures above 2.5 GPa. The variation of Ga NAs luminescence peak with pressure was calculated by the two-level model and the measured pressure behavior of the Ga As band edge and the N electron level. However, the calculated results are quite different from the experimental results, indicating that the two-level model is not perfect Be applicable. A brief discussion of the observed changes in the intensity and half-width of the Ga NAs luminescence peaks as a function of pressure was also carried out.