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本文用脉冲激光沉积(PLD)法在SiO2基片上制备了ZnO薄膜和Zn1-xMnxO薄膜。X射线衍射、原子力显微镜、紫外-可见光分光光度计对ZnO薄膜的测试结果表明:薄膜具有(103)面的择优取向,表面比较平坦;SiO2基片上制备的薄膜在387nm附近存在明显的吸收边,且薄膜的吸收对基片温度变化不明显。通过对Zn1-xMnxO薄膜的吸收光谱分析得出:Mn离子的掺杂改变了ZnO薄膜的禁带宽度,随着Mn离子掺杂量的增加,薄膜禁带宽度增加;薄膜的光吸收也从直接跃迁过渡为间接跃迁。
In this paper, ZnO thin films and Zn1-xMnxO thin films were prepared on SiO2 substrates by pulsed laser deposition (PLD). The results of X-ray diffraction, atomic force microscopy and UV-Vis spectrophotometer show that the film has the preferred orientation of (103) plane and the surface is relatively flat. The film prepared on SiO2 substrate has obvious absorption edge near 387nm, And the absorption of the film on the substrate temperature is not obvious. The absorption spectra of Zn1-xMnxO films indicate that the doping of Mn ions changes the forbidden band width of ZnO thin films. With the increase of Mn doping amount, the forbidden band width of the films increases. The light absorption of the films also increases from the direct Transition transitions to indirect transitions.