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本文系统地研究了用固相反应再生长法在Ｐ型ＧａＡｓ衬底上制备的Ｐｄ／Ｓｂ（Ｍｎ）薄膜的光学性质．通过对不同薄膜厚度、材料组分、退火温度和时间下的反射与透射率谱的研究表明，在近红外区存在一个较强的反射峰；当薄膜厚度为５０ｎｍ左右，退火温度在３００℃到３５０℃，钯与锑原子比为１∶１时，可以得到较大的反射和一定的透射，有可能用作垂直腔面发射半导体激光器的Ｐ型边谐振腔镜兼注入电极．
In this paper, the optical properties of Pd / Sb (Mn) thin films prepared on P-type GaAs substrates by solid-state reaction regrowth method are studied systematically. The results of reflection and transmittance spectra at different film thickness, material composition, annealing temperature and time show that there is a strong reflection peak in the near infrared region. When the film thickness is about 50 nm and the annealing temperature is between 300 ℃ and 350 ℃, the atomic ratio of palladium to antimony is 1: 1, the larger reflection and transmission can be obtained, which makes it possible to use as P-side cavity mirror and implant electrode for vertical cavity surface emitting semiconductor laser.