已经采用热激电流测量方法(简写为TSC)研究了GaP、GaAsP、GaAs之类的光电子材料中的深能态对于限制p—n结型器件的少数载流子寿命的作用。将TSC方法的结果与同一样品的发光特性配合起来,就能得到有关特定深能态对无辐射过程的作用的资料。已经在p-n结和schottky势垒二极管上进行了TSC测量,从而可以 The effect of deep state in optoelectronic materials such as GaP, GaAsP, GaAs, to limit the minority carrier lifetime of p-n junction devices has been investigated using the thermal shock current measurement method (abbreviated as TSC). By combining the results of the TSC method with the luminescence properties of the same sample, one can obtain data on the effect of a particular deep state on a nonradiative process. TSC measurements have been made on p-n junctions and schottky barrier diodes, which makes it possible