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利用电子束热蒸发技术在不同氧分压和烘烤温度下镀制了一系列TiO2单层膜,采用表面热透镜技术测量了样品在1064nm处的弱吸收值,并用激光损伤测试平台测量了样品的抗激光损伤阈值(LIDT)特性。实验结果表明较高的氧分压和较低的烘烤温度能显著减小薄膜的吸收值。不过薄膜在基频下的损伤阈值除了受到薄膜吸收值的影响外,还取决于基底表面的杂质密度,当薄膜吸收较大时,本征吸收对损伤破坏起到主要作用;随着薄膜的吸收逐渐减小,基底表面处的缺陷吸收逐渐取代本征吸收成为影响薄膜损伤阈值的主导因素。
A series of TiO2 monolayers were prepared by electron beam thermal evaporation at different partial pressure of oxygen and baking temperature. The weak absorption of the sample at 1064nm was measured by the surface thermal lens technique. The laser damage testing platform was used to measure the sample Anti-laser damage threshold (LIDT) characteristics. The experimental results show that higher oxygen partial pressure and lower baking temperature can significantly reduce the absorption value of the film. However, the damage threshold of the film at fundamental frequency is affected by the absorption value of the film, and also depends on the impurity density of the substrate surface. When the film absorbs more, the intrinsic absorption plays a major role in the damage. As the film absorbs Gradually reduce, and gradually replace the intrinsic absorption of defects at the substrate surface become the dominant factor affecting the film damage threshold.