为选出合适的辅助离子源进行沉积制备c-BN薄膜,通过对高能和低能辅助镀膜离子源的重要性能进行比较研究之后,在单晶Si基体进行应用制备立方氮化硼薄膜,用红外光谱(FTIR)及光电子能谱(XPS)分析技术,对不同辅助离子源制备沉积的薄膜,进行比较表征,得出结论:低能辅助镀膜离子源,比高能辅助镀膜离子源更适用于制备立方氮化硼薄膜。 In order to select the suitable auxiliary ion source for deposition deposition of c-BN films, by comparing the important properties of high-energy and low-energy auxiliary coating ion source, the single-crystal Si substrate was used to prepare cubic boron nitride films, (FTIR) and photoelectron spectroscopy (XPS) were used to characterize the films prepared by different ion sources. The conclusions were drawn as follows: The low-energy auxiliary coated ion source is more suitable than the high-energy auxiliary coated ion source for the preparation of cubic nitridation Boron film.