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日本三菱公司首次制造出带MQW结构的脊形波导AlGaAs/GaAs DFB LD,该器件的I_th=28mA(20℃),该值为已报导AlGaAs/GaAs DFB LD的最低值,在宽的温度范围内实现了稳定的单纵模和
Japan’s Mitsubishi Corporation first fabricated a ridge waveguide AlGaAs / GaAs DFB LD with an MQW structure with I_th = 28mA (20 ° C), which is the lowest reported value for AlGaAs / GaAs DFB LDs over a wide temperature range Achieve a stable single longitudinal mode and