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一、前言 制备Si_3N_4-ZrO_2复合材料时,Si_3N_4与ZrO_2易反应生成ZrN。ZrN的生成改变了Si_3N_4材料的绝缘性能。本文研究了Si_3N_4-ZrO_2复合材料的室温导电特性。结果表明:Si_3N_4-ZrO_2复合材料在室温下电阻率随加入ZrO_2的量的增加而降低。对同一组成的样品,其电阻率随制备温度的提高而呈下降趋势。这种材料的低电阻率对进一步研究它的放电加工有利。
I. PREFACE Preparation Si_3N_4-ZrO_2 composites, Si_3N_4 and ZrO_2 react easily to produce ZrN. The formation of ZrN changed the insulating properties of Si_3N_4 material. In this paper, the room temperature conductivity of Si_3N_4-ZrO_2 composites was studied. The results show that the resistivity of Si_3N_4-ZrO_2 composites decreases with the addition of ZrO_2 at room temperature. The same composition of the sample, the resistivity decreased with the preparation temperature decreased. The low resistivity of this material is beneficial to further study of its EDM.