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作者以提高H~+-ISFET可靠性为目的,对它的失效现象进行了探讨,并提出了防止这种失效现象的方法.1 H~+-ISFET输出特性劣化现象本实验所分析的H~+-ISFET均为n沟道耗尽型,其结构剖面及封装如图1所示.
In order to improve the H ~ + -ISFET reliability for the purpose of its failure phenomenon was discussed, and put forward to prevent this failure phenomenon.1 H ~ + -ISFET output characteristics of the deterioration of the experimental analysis of H ~ + -ISFET are n-channel depletion type, the structure of the cross-section and package shown in Figure 1.