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对电容放电和5min恒流激励时半导体桥换能元的爆发特性进行了实验研究,测试了半导体桥作用过程中电压、电流、电阻的变化规律,通过对电阻变化特点的详细分析,发现恒流激励时半导体桥存在临界爆发电流,电容放电激励时存在爆发和产生等离子体两个临界电压。然后利用D-最优化法测试了电阻约为0.8Ω、长度为80μm、宽度为380μm、厚度为2μm、V型角为90°的半导体桥的临界爆发电流、临界爆发电压和产生等离子体的临界电离电压等数据,通过加载不同的电压,得出了爆发时间与充电电压之间的规律。
The discharge characteristics of semiconductor bridge converter during capacitive discharge and 5min constant current excitation were studied experimentally. The variation of voltage, current and resistance in the process of semiconductor bridge was tested. Through the detailed analysis of the characteristics of resistance change, it was found that the constant current There is a critical outburst current in the semiconductor bridge when excited, and there are two kinds of threshold voltage of plasma explosion when the capacitor discharge is excited. Then, the critical burst current, critical burst voltage and criticality of plasma generated by a semiconductor bridge with a resistance of about 0.8Ω, a length of 80μm, a width of 380μm, a thickness of 2μm and a V-shaped angle of 90 ° were tested by using the D-optimization method Ionization voltage and other data, obtained by loading different voltage, the law between the burst time and charging voltage.