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测量了激射波长为1.1微米的 InGaAsP/InP 双异质结激光器的远场分布图。用图解法计算了有源层的折射率、有源层与限制层的相对折射率差和能量限制因子。测量结果与一些作者的报道相符合。用测量结果对有源层内的吸收耗损进行了估算,发现目前制作的激光器中的吸收耗损较大。
The far-field profile of an InGaAsP / InP double heterostructure laser with a lasing wavelength of 1.1 μm was measured. The refractive index of the active layer, the relative refractive index difference between the active layer and the confinement layer and the energy limit factor are calculated graphically. The measurement is consistent with the reports of some authors. The absorption loss in the active layer was estimated with the measurement results and it was found that the absorption loss in the laser produced at present is large.