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采用红外吸收法测定熔体生长掺硅的GaAs单晶的补偿比。实验结果表明:当2×10~172×10~18/厘米~3,θ分别随n的减少或增加而增加。 从施主、受主浓度的分布是同步的,以及沿锭长分布符合定向凝固的杂质分凝规律,提出与杂质硅有关的Si_(As)和Si_(Ga)·V_(Ga)为主要补偿受主,并讨论了Si的掺杂行为。 垂直于晶体生长方向的试样的n,N_D和N_A的分布特征,表明N_A似乎是影响均匀性的主要缺陷。根据实验结果,简要地讨论改进均匀性和减小补偿比的一些措施。
Infrared absorption method was used to measure the compensation ratio of silicon doped GaAs single crystal in melt growth. The experimental results show that when θ is between 0.25 and 0.40 for 2 × 10 ~ 17 2 × 10 ~ 18 / cm ~ 3, θ, respectively, as n decreases or increases. The concentrations of donor and acceptor are in synchronicity, and the distribution of ingot along the ingot coincides with the direction of solidification of impurities. It is proposed that Si_ (As) and Si_ (Ga) · V_ (Ga) Lord, and discussed the doping behavior of Si. The distribution characteristics of n, N_D and N_A of the samples perpendicular to the crystal growth direction indicate that N_A seems to be the main defect that affects the uniformity. Based on the experimental results, some measures to improve the uniformity and reduce the compensation ratio are briefly discussed.