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采用冷等静压成型结合高温烧结的方法制备ZrB2体材,并用磁控溅射方法在UO2芯块表面制备出ZrB2薄膜。利用X射线衍射、扫描电子显微镜、X射线能谱对烧结体及膜层的物相、形貌和成分进行了表征。采用热循环冲击的方法测试膜基结合性能。结果表明,所制体材能够满足磁控溅射制备ZrB2薄膜的需求。体材和膜层均为单相ZrB2,ZrB2薄膜生长均匀、致密且与基体有着良好的结合性能,膜层可以承受80℃到600℃快速升降温5次的热循环而仍然与基体紧密结合。
ZrB2 was prepared by cold isostatic pressing combined with high temperature sintering. ZrB2 thin films were prepared on the surface of UO2 pellets by magnetron sputtering. The phase, morphology and composition of the sintered body and the film were characterized by X-ray diffraction, scanning electron microscopy and X-ray energy dispersive spectroscopy. The thermal cycling impact method was used to test the film-based bonding properties. The results show that the prepared material can satisfy the demand of ZrB2 film prepared by magnetron sputtering. Both ZrB2 and ZrB2 thin films grow evenly and densely and have a good combination with the matrix. The film can withstand the thermal cycle of rapid heating and cooling 5 times at 80 ℃ to 600 ℃ and still adhere tightly to the substrate.