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光刻胶的针孔密度是检验光刻胶质量的重要项目,它的好坏不仅反应了光刻胶外在的杂质含量,而且也说明了内在的组成,因此国内外生产和使用厂家都比较重视这个项目,下面除重点介绍美国ASTMF66-77T的测定方法外,对其他方法也做了重点说明。 一、腐蚀法 这种方法是首先在硅片上热生长一层稳定的均匀的SiO_2,作Si的保护层,在氧化层上再涂光刻胶,胶涂匀后要经过干燥,曝光,显影和后烘,然后在SiO_2腐蚀液(氟化铵:氢氟酸=7:1)中进行腐蚀,如果胶面有针孔,则腐蚀液通过针孔对SiO_2进行腐蚀,然后除去光刻胶,再通过SiO_2针孔对衬底Si采用各种腐蚀剂进行腐蚀,最后在显微镜下进行计数。对于硅的腐蚀方法有以下几种:
The pinhole density of the photoresist is an important item for checking the quality of the photoresist. The quality of the photoresist not only reflects the external impurity content of the photoresist, but also shows the intrinsic composition. Therefore, both domestic and foreign manufacturers and manufacturers compare Emphasis on this project, in addition to focusing on the introduction of the United States ASTMF66-77T determination method, the other methods also made a key note. First, the corrosion method This method is first on the silicon growth of a layer of stable uniform SiO 2, as the protective layer of Si, the oxide layer and then coated with a photoresist, glue evenly after drying, exposure, development And after baking, and then in the etching solution of SiO 2 (ammonium fluoride: hydrofluoric acid = 7: 1) for corrosion, if the glue surface has pinholes, the etching solution through the pinhole SiO_2 corrosion, and then remove the photoresist, The substrate Si was etched with various etchants through the SiO 2 pinhole and finally counted under the microscope. There are several ways to etch silicon: