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本文介绍了一种双栅GaAs MESFET的微波大信号模型。这种模型能预测小信号和大信号电路的器件性能。该模型是以前建立的普通MESFET模型的扩展。它依据的基本原理是器件性能与它的几何结构及物理参数的相关性。通过计算器件的直流曲线、小信号S参数和放太器的大信号模拟这三种性能,证明这种模型是精确而高效的。计算得到的性能和测量得到的性能非常一致。只是为了比较才给出了计算结果。对器件性能没有过多地进行全面的分析。
This article describes a large double-gate GaAs MESFET microwave signal model. This model predicts device performance for small and large signal circuits. This model is an extension of the previously established general MESFET model. It is based on the basic principle of the device performance and its geometry and physical parameters of the correlation. By calculating the DC curve of the device, small signal S parameters and large signal amplifier to simulate these three properties, this model is proved to be accurate and efficient. The calculated performance is in good agreement with the measured performance. Only for comparison is given the calculation results. The device performance is not overly comprehensive analysis.