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氮团簇离子N1+0注入单晶硅直接诱发其表层转化为纳米晶结构,导致光学性质发生显著变化.在250—320nm波段的紫外光激励下,在330—500nm光区出现明显的光发射带,并在360nm附近产生强度极高、单色性良好的发射峰,其强度达到N+注入试样或基底的5倍,是N2+注入试样的1.5倍.在可见光区的730nm附近和近红外区的830nm附近也出现发光带.所有上述发光都非常稳定,可长时间保持其发光效率不变.这表明注入层已形成一种品质优良的光致发光材料.
Nitrogen cluster ions N1 +0 direct injection of monocrystalline silicon induced surface layer into the nanocrystalline structure, resulting in significant changes in optical properties in the 250-320nm band UV excitation, in the 330-500nm light region significant light emission Band and produced an intensely intense, monochromatic emission peak near 360 nm with an intensity five times that of an N + implanted sample or substrate, which is 1.5 times higher than that of an N2 + implanted sample. In the visible region near 730 nm and near infrared The emission band appears near 830 nm in the region, and all the above luminescence is very stable, keeping its luminous efficiency constant for a long time, indicating that the injection layer has formed a good quality photoluminescent material.