Aichi大学的M.Noda教授利用脉冲放电等离子化学气相沉积技术,成功地在Si_3N_4基体上沉积了金刚石膜。Si_3N_4基片尺寸13mm×13mm×5mm,实验模型是在沉积室中安置一对电极,阳极为一块钼板制成的样品台,Si_3N_4片放置其上,沉积室内充H_2-CH_4混合气(气压150托,CH_4浓度1%),在脉冲放电下离解为等离子体,基片露置在等离子体中,在每个脉冲 Professor M. Noda, from Aichi University, successfully deposited diamond films on a Si_3N_4 substrate using pulsed discharge plasma chemical vapor deposition. Si_3N_4 substrate size 13mm × 13mm × 5mm, the experimental model is placed in the deposition chamber a pair of electrodes, the anode is a molybdenum plate made of sample stage, Si_3N_4 piece placed thereon, the deposition chamber filled with H_2-CH_4 mixture (pressure 150 Torr, CH_4 concentration 1%), dissociated into a plasma under pulsed discharge, the substrate exposed in the plasma, and after each pulse