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本文研究了用稳态的C_0~(60)对采用热解和干法栅氧化制作的多晶硅栅MOS电容器进行辐照时,栅氧化温度对电容器的辐照诱生平带和阈值电压漂移以及界面态建立的影响。在850℃下生长的热解氧化层,其辐照诱生平带电压漂移和阈值电压漂移可达到最小值。计算了低温热解氧化层MOS电容器的阈值电压和平带电压漂移与总剂量效应辐照时外加栅偏压以及氧化层厚度的依赖关系。我们获得了辐照诱生界面态与总剂量和氧化层厚度两者的关系均为2/3幂指数关系。
In this paper, the steady-state C_0 ~ (60) irradiation of polysilicon gate MOS capacitor fabricated by pyrolysis and dry-gate oxidation is studied. The band-gap and threshold voltage drift induced by the gate oxidation temperature and the interface voltage The impact of establishment. The pyrolytic oxide layer grown at 850 ℃ has the lowest banding voltage drift and threshold voltage drift induced by irradiation. The dependence of the threshold voltage and the drift of the flat band voltage on the MOS capacitor of low temperature pyrolytic oxide layer with the gate bias and the thickness of the oxide layer during the irradiation of the total dose effect were calculated. We obtained the relationship between irradiance-induced interface states and total dose and oxide thickness both in 2/3 power exponential relationship.