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In this paper,we present the design and performances of a low-noise and radiation-hardened front-end readout application specific integrated circuit(ASIC) dedicated to CdZnTe detectors for a hard X-ray imager in space applications.The readout channel is comprised of a charge sensitive amplifier,a CR-RC shaping amplifier,an analog output buffer,a fast shaper,and a discriminator.An 8-channel prototype ASIC is designed and fabricated in TSMC 0.35-μm mixed-signal CMOS technology,the die size of the prototype chip is 2.2×2.2 mm~2.The input energy range is from 5 to 350 keV.For this 8-channel prototype ASIC,the measured electrical characteristics are as follows:the overall gain of the readout channel is 210 V/pC,the linearity error is less than 2%,the crosstalk is less than 0.36%,The equivalent noise charge of a typical channel is 52.9 e~- at zero farad plus 8.2 e~- per picofarad,and the power consumption is less than 2.4 mW/channel.Through the measurement together with a CdZnTe detector,the energy resolution is 5.9%at the 59.5-keV line under the irradiation of the radioactive source ~(241)Am.The radiation effect experiments show that the proposed ASIC can resist the total ionization dose(TID) irradiation of higher than200 krad(Si).
In this paper, we present the design and performances of a low-noise and radiation-hardened front-end readout application specific integrated circuit (ASIC) dedicated to CdZnTe detectors for a hard X-ray imager in space applications. of a charge sensitive amplifier, a CR-RC shaping amplifier, an analog output buffer, a fast shaper, and a discriminator. Ann 8-channel prototype ASIC is designed and fabricated in TSMC 0.35-μm mixed-signal CMOS technology, the die size of the prototype chip is 2.2 × 2.2 mm ~ 2. The input energy range is from 5 to 350 keV. For this 8-channel prototype ASIC, the measured electrical characteristics are as follows: the overall gain of the readout channel is 210 V / pC, the linearity error is less than 2%, the crosstalk is less than 0.36%, The equivalent noise charge of a typical channel is 52.9 e ~ - at zero farad plus 8.2 e ~ - per picofarad, and the power consumption is less than than 2.4 mW / channel.Through the measurement together with a CdZnTe detector, t The energy resolution is 5.9% at the 59.5-keV line under the irradiation of the radioactive source ~ (241) Am. The radiation effect experiments show that the proposed ASIC can resist the total ionization dose (TID) irradiation of higher than 200 krad (Si ).