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This paper presents a 1.12 Gb/s 11.3 mW transmitter using 0.18 μm mixed signal complementary metaloxide semiconductor technology with a 1.8 V supply voltage.This transmitter implements a high-speed transmission with 1.2 V common-mode output voltage,adopting a low-voltage differential signaling(LVDS) technique.A multiplexer(MUX) and an LVDS driver are critical for a transmitter to complete a high-speed data transmission.This paper proposes a high power-efficiency single-stage 14:1 MUX and an adjustable LVDS driver circuit,capable of driving different loads with a slight increase in power consumption.The prototype chip implements a transmitter with a core area of 970×560μm~2,demonstrating low power consumption and adjustable driving capability.
This paper presents a 1.12 Gb / s 11.3 mW transmitter using 0.18 μm mixed signal complementary metaloxide semiconductor technology with a 1.8 V supply voltage. This transmitter implements a high-speed transmission with 1.2 V common-mode output voltage, adopting a low-voltage differential signaling (LVDS) technique. A multiplexer (MUX) and an LVDS driver are critical for a transmitter to complete a high-speed data transmission. This paper proposes a high power-efficiency single-stage 14: 1 MUX and an adjustable LVDS driver circuit , capable of driving different loads with a slight increase in power consumption. The prototype chip implements a transmitter with a core area of 970 × 560 μm ~ 2, demonstrating low power consumption and adjustable driving capability.