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采用直流磁控溅射与后退火工艺相结合的方法,在掺氟SnO_2(FTO)导电玻璃基底上制备了高质量的掺钨VO_2薄膜,对薄膜的结构、表面形貌和光电特性进行测试,分析了钨掺杂对其相变性能的影响.结果表明,室温下掺钨VO_2薄膜的阈值电压为4.2 V,观察到阈值电压下约有两个数量级的电流突变.随着温度升高,相变的阈值电压降低,且电流突变幅度减小.当施加8 V电压时,分别在不同温度下测试了掺钨VO_2薄膜的透过率.温度为20和50℃时,掺钨VO_2薄膜相变前后的红外透过率差量分别为23%和27%.与未掺杂的VO_2薄膜相比,掺钨VO_2薄膜具有相变温度低、阈值电压低和电阻率小的特点,在高速光电器件中有广阔的应用前景.
A high quality tungsten doped VO_2 thin film was prepared on the fluorine-doped SnO_2 (FTO) conductive glass substrate by the combination of DC magnetron sputtering and post-annealing process. The structure, surface morphology and photoelectric properties of the thin film were tested. The influence of tungsten doping on the phase transition properties was analyzed. The results show that the threshold voltage of VO_2 thin film doped with tungsten is 4.2 V at room temperature, and about two orders of magnitude of current abrupt change are observed at the threshold voltage.With the increase of temperature, When the voltage is 8 V, the transmittance of the VO_2 thin film is tested at different temperatures. When the temperature is 20 and 50 ℃, the phase transition of the VO_2 thin film Compared with undoped VO_2 thin films, tungsten doped VO_2 thin films have the characteristics of low phase transition temperature, low threshold voltage and small resistivity. In the high-speed optoelectronic devices In the broad application prospects.