本文讨论了一种新的改进型I~2L结构,它在保持低功耗工作的情况下具有速度高,扇出能力大的特点。制作了一种新的“向上扩散”结构,它的特点是容易并入肖特基二极管。通过在n—p—n开关晶体管的集电极与基极之间加上肖特基箱位,获得了低达2.5毫微秒的门时延。 This article discusses a new improved I ~ 2L structure that maintains high speed and high fanout capability while maintaining low power consumption. A new “diffuse” structure was created that features easy incorporation of Schottky diodes. A gate delay of as low as 2.5 nanoseconds is achieved by adding a Schottky box between the collector and the base of the n-p-n switching transistor.