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采用p-InP/n-InGaAs/n-InP外延异质结材料,制备了InGaAs线列台面探测器,并测试了器件的I-V曲线、响应率和噪声。通过拟合I-V曲线得到了器件的理想因子和串联电阻,并分析了它们对器件响应率和噪声的影响。结果表明:InGaAs吸收层外延质量与器件的理想因子相关联,影响器件的噪声,但对器件的响应率影响不大。计算了无光照和有光照情况下串联电阻Rs取不同值时器件的I-V曲线,得到串联电阻较小时其作用可忽略,但串联电阻会表观上增大零偏电阻,且串联电阻越大,损失的光电流越多。实验结果证明该方法对改进器件性能有一定的参考意义。
The p-InP / n-InGaAs / n-InP epitaxial heterojunction materials were used to fabricate the InGaAs line-top mesa detector. The I-V curve, response rate and noise of the device were measured. The ideal factor and series resistance of the device are obtained by fitting the I-V curve, and their influence on the device response rate and noise is analyzed. The results show that the epitaxial mass of the InGaAs absorber layer is related to the ideal factor of the device, which affects the noise of the device, but has little effect on the response of the device. The IV curve of the device with different values of series resistance Rs is calculated under no light and light conditions. The effect is negligible when the series resistance is small, but the series resistance obviously increases the bias resistance. The larger the series resistance, Loss of photocurrent more. Experimental results show that this method has certain reference value for improving device performance.