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为了保证双向可控硅的导通性能,需要其四个导通状态的触发电流IGT1,IGT2,IGT3和IGT4的大小尽可能地接近,尽可能地灵敏。采用目前国内常规工艺在IGT3小于5 mA,IGT4小于7 mA时,器件的VDRM和VRRM会低于600 V甚至400 V,致使产品无法正常使用及满足客户的需求。提出了一种改进工艺,通过采用光刻补B区,局部补适当浓B并且采用P扩后补B的方法,提高了注入电流的有效占比,使相同的P扩条件下IGT减小,触发灵敏度提高。该工艺所生产的产品的触发电流均匀性好,触发灵敏度高,通态压降低,使该产品稳定性好,通用性强,使用过程中发热量小。此工艺技术简单实用,操作方便,效果明显,产品的主要性能参数在同行中处于国际领先水平。
In order to ensure the conduction performance of the triac, the four on-state trigger currents IGT1, IGT2, IGT3 and IGT4 are required to be as close as possible and as sensitive as possible. With the current domestic conventional process, when the IGT3 is less than 5 mA and the IGT4 is less than 7 mA, the VDRM and VRRM of the device are lower than 600 V or even 400 V, which makes the product unusable and meets the needs of customers. An improved technique is proposed to increase the effective proportion of injection current and make the IGT decrease under the same P - Trigger sensitivity increased. The product has good triggering current uniformity, high triggering sensitivity and low on-state voltage. The product has good stability, high universality and low calorific value during use. The process technology is simple and practical, easy to operate, the effect is obvious, the main performance parameters of products in the peer in the leading international level.