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提出了用拉曼显微镜测试 Si C/ Al2 O3纳米复合材料表层 V氏压痕周围残余应力的新方法。试验结果表明 ,其荧光光谱 R曲线峰频率随离压痕中心的距离大小而变化 ,压头施加在材料上的载荷的大小 ,严重影响 R曲线频率的变化。文中假定应力张量横向各向同性 ,并以加压之前材料的荧光光谱作为基值 ,确定压痕周围的残余应力。最后 ,采用等静应力解释并比较了压痕周围残余应力与压痕载荷、离压痕中心距离之间的关系。
Raman microscopy was proposed to test the residual stress around the V-notch of Si C / Al 2 O 3 nanocomposites. The experimental results show that the peak frequency of R curve changes with the distance from the center of indentation, and the size of the load exerted on the material by the indenter seriously affects the change of R curve frequency. It is assumed that the stress tensor is transversely isotropic, and the fluorescence spectrum of the material before pressurization is taken as the base value to determine the residual stress around the indentation. Finally, the relationship between the residual stress and the indentation load and the distance from the indentation center is explained and compared by the isostatic stress.