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报道了铁酸铋薄膜样品在80K~300K温度范围直流电学输运性质的研究结果.利用同一前驱体不同老化时间,用化学溶液沉积法在钛酸锶衬底上制备出两种样品.在低阻样品中,低场下电流随电压变化遵从欧姆定律,电阻不随温度变化;而在中等强度外场下显示出肖特基二极管性质.在高阻样品中,低场下电流密度沿晶界分布,输运中的势垒能级为0.57eV;高场下电流的传输则遵从Frenkel-Poole模型,相关势垒能级0.12eV.低阻和高阻两种样品在85K温度下可测最大剩余极化分别为2.6μC/cm2和28.8μC/cm2.
The results of direct current transport properties of bismuth ferrite thin films in the temperature range of 80K ~ 300K were reported. Using the same precursor for different aging time, two samples were prepared on the strontium titanate substrate by chemical solution deposition method. In the resistive samples, the current follows the Ohm’s law as the voltage changes with low voltage, the resistance does not change with temperature, but shows the Schottky diode property under medium-intensity external field. In the high-resistance samples, the current density is distributed along the grain boundary under low- The barrier energy level during transport is 0.57eV; the current transfer under high field complies with the Frenkel-Poole model with a barrier potential of 0.12eV. Both low resistance and high resistance measure the maximum residual current at 85K 2.6μC / cm2 and 28.8μC / cm2 respectively.