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The valence band offset (VBO) of an Alo.17Ga0.83N/GaN heterojunction is determined to be 0.13 ± 0.07eV by x-ray photoelectron spectroscopy.From the obtained VBO value,the conduction band offset (CBO) of ~0.22 eV is obtained.The results indicate that the Al0.17Ga0.83N/GaN heterojunction exhibits a type-I band alignment.