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在分析传统Doherty合路结构对其带宽限制的基础上,提出一种新型负载调制网络。该负载调制网络为平行式负载调制和一段并联的1/4波长短路线相结合的结构方案,经推理可有效弥补传统Doherty负载调制网络中的带宽限制效应从而达到拓展带宽的目的。为验证设计方案的实际可行性,采用两个10 W的GaN HEMT晶体管设计了一款应用于无线通信的宽带Doherty功率放大器并进行了实物测试,测试结果表明该功率放大器的工作带宽为1.6~2.6 GHz,整体频带内饱和输出功率大于41 dBm,饱和漏极效率最大能达到56%,输出功率回退6 dB处的漏极效率在35%~38%之间,邻道功率比(ACPR)优于-45 dBc,表明该设计方案能够达到预期效果。
Based on the analysis of the bandwidth limitations of the traditional Doherty combinational structure, a new type of load modulation network is proposed. The load modulation network is a combination of parallel load modulation and a parallel quarter-wave short-circuit. The reasoning can effectively make up the bandwidth limitation in the traditional Doherty load modulation network and achieve the purpose of bandwidth expansion. In order to verify the feasibility of the design, a 10W GaN HEMT transistor is designed for a wideband Doherty power amplifier used in wireless communications. The test results show that the working bandwidth of the power amplifier is 1.6 ~ 2.6 GHz, the saturated output power is greater than 41 dBm in the whole frequency band, the saturation drain efficiency is up to 56%, and the drain efficiency at the output power backoff 6 dB is between 35% and 38%. The adjacent channel power ratio (ACPR) is excellent At -45 dBc, indicating that the design can achieve the desired results.