论文部分内容阅读
在真空半导体产业发展过程中,决定产品质量的关键因素是生产工艺过程的参数控制,等离子体增强化学气相沉积(PECVD)中比较重要的一个参数为腔室内压力值。通过变结构腔室压力测量试验验证,得到正确可行的针对变结构腔室三维模型的网格剖分方法和仿真算法。影响腔室内压力分布的四个变量中,依次改变粘滞阻力系数、入口初始压力、入口流量和排气口压力的大小,分析计算腔室内压力分布特性。变结构腔室中压力分布规律,为PECVD腔室结构设计及腔室压力控制提供理论依据。
In the development of the vacuum semiconductor industry, the key factor that determines the product quality is the parameter control of the production process. One of the more important parameters in PECVD is the pressure in the chamber. Through the verification of variable structure chamber pressure measurement, the correct and feasible meshing method and simulation algorithm for three-dimensional model of variable structure chamber are obtained. Among the four variables affecting the pressure distribution in the chamber, the viscous drag coefficient, the initial inlet pressure, the inlet flow rate and the pressure at the exhaust port are sequentially changed, and the pressure distribution in the chamber is analyzed and calculated. The pressure distribution in the variable structure chamber provides theoretical basis for PECVD chamber design and chamber pressure control.