论文部分内容阅读
准分子激光器被用于在低温下(I100-350℃)光化学淀积二氧化硅、氮化硅、氧化铝和氧化锌薄膜实验表明淀积速率可超过3000/min,并且淀积薄膜均匀地覆盖在陡峭的台阶上.这种薄膜呈现出低的缺陷密度和高的击穿电压,并且用红外(IR)光谱,AES和C-V测试进行了分析.通过使用光淀积薄膜作为隔离介质层、扩散掩膜和用于制造CMOS器件的钝化层,研究了与器件的相容性.此外,我们使用UV光解三甲基铝和难熔金属六羰基化合物在较大面积上(>5cm~2)淀积出了Al、Mo、W和Cr薄膜.根据淀积图形得到了透明的金属膜以及黑色的细小微粒膜薄.黑色薄膜说明以圆柱形晶粒生长.在室温下,在硼硅酸璃玻和石英晶体以及硅晶片上进行了淀积.我们分别研究了这些薄膜的附着力、应力和台阶覆盖性.这些薄膜表明其电阻率至多为块状材料电阻率的20倍,并且张应力不大于7×10~9dynes/cm~2.
Excimer lasers were used to photochemically deposit silicon dioxide, silicon nitride, aluminum oxide and zinc oxide films at low temperatures (100-350 ° C) Experiments showed that the deposition rate could exceed 3000 cm / min and the deposited films were uniformly Covered on steep steps.These films showed low defect density and high breakdown voltage and were analyzed by infrared (IR) spectroscopy, AES and CV tests. By using photo-deposited films as the isolation dielectric layer, Diffusion mask, and the passivation layer used to fabricate CMOS devices, we studied the compatibility with the device.In addition, we used UV photolysis of trimethylaluminum and refractory metal hexacarbonyl compounds in a large area (> 5cm ~ 2) Al, Mo, W and Cr thin films were deposited. Transparent metal films and black thin fine film thin films were obtained according to the deposition pattern. The black thin film shows the growth of cylindrical grains. Acrylic glass and quartz crystals and silicon wafers were deposited.We studied the adhesion, stress and step coverage of these films, respectively.These films show a resistivity of up to 20 times the resistivity of bulk materials, The stress is not more than 7 × 10 ~ 9dynes / cm ~ 2.