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业已指出,普通场效应晶体管之所以表现出饱和特性,其原因是:随着漏电压的增加,在接近夹断电压时由于沟道串联电阻显著增大而提高了负反馈效应,此时表观跨导G′_m=G_m/(1+r_s·G_m)变为G′_m(?)r_s~(-1)。还指出,1950年Watonabe(渡边)和Nishizawa(西泽)发表的模拟真空型晶体管只有在内部负反馈作用小到G′_m(?)G_m时才呈现出不饱和的“立起的”特性。在这种情况下,当沟道尚未夹断时,特性是欧姆型的,晶体管可以作为一个良好的可变电阻;而当沟道已经夹断时,由于漏的静电感应,器件呈现出类似于真空三极管的“立起的”特性。因为这种晶体管的输出特性和输入特性一样,是以静电感应为基础的,它和真空三极管相类似,被称为“静电感应晶体管”。与肖克莱预言的“模拟晶体管”遵循空间电荷导电规律恰好相反,静电感应晶体管具有指数特性。业已确认,这种静电感应晶体管具有低噪声、低失真和大功率能力,并且已经作出大功率晶体管(8兆赫,2千瓦),高频晶体管(超高频几瓦)以及高速可变电阻器,正在制作微波晶体管、超高速集成电路以及可变电阻器。
It has been pointed out that the reason why a general field effect transistor shows a saturation characteristic is that as the drain voltage increases, the negative feedback effect is raised due to a significant increase of the series resistance of the channel close to the pinch-off voltage, Transconductance G’_m = G_m / (1 + r_s · G_m) becomes G’_m (?) R_s ~ (-1). It was also pointed out that the simulated vacuum-type transistors published by Watonabe and Nishizawa in 1950 exhibited an unsaturated “erected” characteristic only when the internal negative feedback effect was as small as G’_m (?) G_m . In this case, the characteristics are ohmic when the channel is not pinched off, and the transistor can act as a good variable resistor; when the channel is pinched off, the device exhibits a voltage similar to the vacuum due to the electrostatic induction of the drain The “stand-up” nature of the transistor. Because the output characteristics of this transistor, like the input characteristics, are based on electrostatic induction, which is similar to a vacuum transistor and is called an “electrostatic induction transistor.” In contrast to Shockley’s “analog transistor” which follows the space charge conduction law, the electrostatic induction transistor has exponential properties. It has been confirmed that this type of electrostatic induction transistor has low noise, low distortion and high power capability, and high power transistors (8 MHz, 2 kW), high frequency transistors (a few watts of high frequency) and high speed variable resistors have been made Production of microwave transistors, ultra-high speed integrated circuits and variable resistors.