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在InP H~+轰击工艺研究基础上,开发出一种对中等轰击能量(E≤250keV)的H~+具有满意掩蔽能力的掩膜──Au/Zn/Au/AZ 1350J复合膜,并首次解决了条宽窄至5μm的Au/Zn/Au/AZ 135J断条状掩膜的制备技术,在InGaAsP/InP PBH双区共腔双稳激光器的制备中获得了成功应用。
Based on the study of InP H ~ + bombardment technology, a composite mask of Au / Zn / Au / AZ 1350J with satisfactory masking ability for H ~ + with moderate bombardment energy (E≤250keV) The preparation technology of the Au / Zn / Au / AZ 135J bar-and-stripe mask with a width of 5 μm is solved, and the successful application is achieved in the preparation of an InGaAsP / InP PBH double-region common-cavity bistable laser.